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Products/Services for hall transistor
Hall effect proximity sensors are used to detect the proximity, presence or absence of a magnetic object using a critical distance. Search by Specification | Learn More
Hall effect position sensors are non-contact devices that convert energy from a magnetic field into an electrical signal. They use the Hall effect, a voltage caused by current-flow in the presence of a magnetic field. Search by Specification | Learn More
Power bipolar transistors are semiconductors in which a base n-type or p-type layer is sandwiched between emitter and collector layers of the opposite type. The junctions between the semiconductor sections amplify weak incoming electrical signals. Search by Specification | Learn More
Transistors are electronic devices made of semiconductor material that amplify a signal or open or close a circuit. Search by Specification | Learn More
Insulated gate bipolar transistors (IGBT) are bipolar transistors with an insulated gate. They combine the advantages of the bipolar transistor (high voltage and current) with the advantages of the MOSFET (low power consumption and high switching). Search by Specification | Learn More
RF transistors are designed to handle high-power radio frequency (RF) signals in devices such as stereo amplifiers, radio transmitters, and television monitors. Search by Specification | Learn More
Small-signal bipolar transistors (BJT) are semiconductors that amplify small AC or DC signals. They consist of a base n-type or p-type layer sandwiched between emitter and collector layers of the opposite type. Search by Specification | Learn More
Junction field-effect transistors (JFET) consist of a semiconductor channel in which the width and the conductivity of the channel is controlled by the space-charge region associated with the p-n region. Search by Specification | Learn More
RF bipolar transistors consist of an N-type or P-type layer sandwiched between two layers of the opposite type. They are designed to handle high-power radio frequency (RF) signals in devices such as stereo amplifiers, radio transmitters, and television monitors. Search by Specification | Learn More
RF MOSFET transistors are metal-oxide semiconductor field-effect transistors (MOSFETs) that are designed to handle high-power RF signals from devices such as stereo amplifiers, radio transmitters, TV monitors, etc. Search by Specification | Learn More
Darlington transistors (Darlington pairs) are semiconductor devices that combine two bipolar transistors in a single device. They provide high current gain (commonly written ß) and require less space than configurations that use two discrete transistors. Search by Specification | Learn More
Specialty transistors are specialty or proprietary products and accessories related to transistors. Learn More
Unijunction transistors (UJT) are three-terminal devices that exhibit a negative resistance characteristic. Search by Specification | Learn More
Programmable uni-junction transistors (PUT) are three-terminal thyristors that are triggered into conduction when the voltage at the anode exceeds the voltage at the gate. The PUT is similar to the UJT, but its intrinsic standoff ratio can be set by two external resistors. Hence, the term "programmable" is used. Search by Specification | Learn More
Metal-oxide semiconductor field-effect transistors (MOSFETs) are electronic switching devices with a conducting channel as the output. An electrode called a gate controls the width of the channel and determines how well the MOSFET conducts. Search by Specification | Learn More
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HE950 Proximity Sensor Electro-Sensors, Inc.
High Reliability Back Biased Hall Effect Switch Micropac Industries, Inc.
Custom Proximity Sensors, Hall Effect Micropac Industries, Inc.
Rotary Position Sensor - Angle Sensor Magnetic Sensors Corporation
Hall Effect Zero Speed Sensor Magnetic Sensors Corporation
Hall Effect Speed Sensors, New Hall Sensor Line Honeywell Sensing and Control
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Product News for hall transistor
Bipolar Junction Transistor (BJT)
Bipolar transistors, having 2 junctions, are 3 terminal semiconductor devices. The three terminals of a bipolar transistor are emitter, collector, and base. The transistor can either be a NPN transistor or PNP transistor. (read more)
Power RF Transistors - NPN or PNP Bipolar from AMS
NPN or PNP Bipolar RF Transistors.
If you have need of VHF Amplifiers (136-210 Mhz), American Microsemiconductor will support MHW607-1, -2, -3, and -4 types used primarily in portable hand held radios. (read more)
NPN and PNP Monolithic Dual Transistors
LS310(NPN)and LS350(PNP) Series Monolithic Dual Transistors. Ideal for amplifier input applications seeking Low Offset(0.5 to 3mV), Low Drift, High Gain(400 beta), High Breakdown (25 to 60 Volts)and Low Capacitance(3pf). Replacement for Analog Device MAT01, MAT02 series and Intersil IT120, IT130 series. Available in Surface Mount and Thru-Hole Versions. Instant Availability (read more)
Unijunction Transistors (UJT's) from AMS
Unijunction Transistor (UJT) from American Microsemiconductor.
The unijunction transistor (UJT) is a three terminal, single junction device with characteristics very different from the conventional 2 junction, bipolar transistor... (read more)
AMS: Unijunction Transistor (UJT)
Unijunction Transistor (UJT) from American Microsemiconductor.
The unijunction transistor (UJT) is a three terminal, single junction device with characteristics very different from the conventional 2 junction, bipolar transistor... (read more)
Programmable Unijunction Transistor known as PUT
(PUT) Programmable Unijunction Transistor from American Microsemiconductor, Inc.
Programmable Unijunction Transistor - The PUT is similar to standard Unijunction Transistor except that the breakdown or trigger voltage can be adjusted with external resistors. (read more)
Junction Field Effect Transistor J-FET from AMS
The J-FET (Junction Field Effect Transistor) is a voltage controlled device: that is a small change in input voltage causes a large change in output current. (read more)
TGF2021-04-SG & TGF2021-08-SG, 4GHz RF Transistors
TriQuint's newest GaAs pHEMT discrete transistors, TGF2021-04-SG (4W) & TGF2021-08-SG (7W), are ideal for a variety of applications due to their versatility, offering either narrowband or wideband performance: 20 MHz to 4 GHz. (read more)
Transistor
Bipolar Transistor:
SOT-523, SOT-323, SOT-363, SOT-23, SOT-89, SOT-223, SOT-252, SOT-263, SOT-92, SOT-92SP, SOT-251, SOT-126, SOT-126ML, SOT-220AB, SOT-230FP
Digital Transistor:
SOT-323, SOT-363, SOT-23, SOT-92, SOT-92SP (read more)
AP30G120W-3 Insulated Gate Bipolar Transistor
The APEC series of fast Insulated Gate Bipolar Transistors (IGBTs) provide low conduction and switching losses. The AP30G120W-3 is designed for applications such as Induction Heaters and Micro Ovens where high speed switching is a required feature. (read more)
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IBM Technical Journals Hall Measurements on Silicon Field Effect Transistor Structures |
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IBM Technical Journals Hall Measurements on Silicon Field Effect Transistor Structures Related Subjects: Hall effect; Transistors |
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EECS 141 ? F00 Lecture 5 Digital Integrated Circuits Inverter... Latch-up Digital Integrated Circuits Inverter ? Prentice Hall 1999 4 Threshold Variations V V T T Long-channel threshold Low VDS threshold VDS L |
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Lecture 27 Timing + Introducing Memory Digital Integrated... power perspective) Digital Integrated Circuits Interconnect ? Prentice Hall 2000 Examples of Clock Distribution Compaq 21164 Clocking t = 3.3ns |
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Transistor Thermometer - Developer Zone - National Instruments Document Type: Prentice Hall Author: Alexander D. Khazan Book: Transducers and Their Elements Copyright: 1994 ISBN: 0-13-929480-5 NI Supported: No |
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Piezotransistor Accelerometer - Developer Zone - National... Document Type: Prentice Hall Author: Alexander D. Khazan Book: Transducers and Their Elements Copyright: 1994 ISBN: 0-13-929480-5 NI Supported: No |
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Allegro | Hall-Effect Sensor ICs | Unipolar High-Performance Power and Hall-Effect Sensor ICs See Allegro MicroSystems, Inc. Information |
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National Inventors Hall of Fame - Wikipedia, the free... National Inventors Hall of Fame From Wikipedia, the free encyclopedia Exterior of the National Inventors Hall of Fame museum, 2005 |
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MAGLEV MAGNETIC LEVITATION SUSPENSION DEVICE Hall-effect field sensor Here's the schematic of the device depicted in the photo. |
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Correlation of Pseudo-MOS transistor and Hall effect... Correlation of Pseudo-MOS transistor and Hall effect measurements in thin SOI wafers |
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